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| STPS200170TV1 High voltage power Schottky rectifier Main product characteristics IF(AV) VRRM Tj VF (typ) 2 x 100 A 170 V 150 C 0.63 V A1 K1 A2 K2 Features and benefits Negligible switching losses Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop Insulated package - ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF A2 K2 A1 K1 ISOTOP Description High voltage Schottky rectifier suited for high frequency switch mode power supply. Packaged in ISOTOP, this device is intended for use in the secondary rectification of the applications. Order codes Part Number STPS200170TV1 Marking STPS200170TV1 November 2005 Rev 1 1/7 www.st.com 7 1 Characteristics STPS200170TV1 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj 1. Characteristics Absolute ratings - limiting values per diode at Tamb = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS forward current Average forward current, = 0.5 Tc = 105 C per diode Value 170 200 100 700 100000 -55 to + 150 150 Unit V A A A W C C Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) tp = 1 s, Tj = 25 C dP tot thermal runaway condition for a diode on its own heatsink 1 -------------- < ------------------------dTj R th ( j - a ) Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance 0.31 0.1 C/W Value 0.52 Unit When the diodes are used simultaneously: Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM Min. Typ Max. 200 30 100 0.83 0.63 0.68 0.975 0.78 0.86 V Unit A mA VF(2) Forward voltage drop Tj = 150 C Tj = 25 C Tj = 150 C IF = 100 A IF = 200 A 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.5 x IF(AV) + 0.0018 IF2(RMS) 2/7 STPS200170TV1 1 Characteristics Figure 1. Conduction losses versus average current (per diode) Figure 2. Average forward current versus ambient temperature ( = 0.5, per diode) PF(AV)(W) IF(AV)(A) =0.05 =0.1 =0.2 =0.5 =1 100 90 80 70 120 Rth(j-a)=Rth(j-c) 100 80 60 50 40 30 20 10 0 0 20 40 60 80 100 120 IF(AV)(A) T 60 40 T 20 =tp/T tp =tp/T 0 0 25 tp Tamb (C) 50 75 100 125 150 Figure 3. Non-repetitive surge peak forward current vesus overload duration (maximum values per diode) Figure 4. Relative variation of thermal impedance (junction to case) versus pulse duration 800 700 600 500 400 300 IM(A) 1.0 0.9 0.8 0.7 0.6 TC=50C Zth(j-c)/Rth(j-c) =0.5 0.5 0.4 TC=75C 0.3 0.2 =0.2 =0.1 200 IM T 100 0 1.E-03 t TC=125C 0.1 Single pulse d=0.5 t(s) 1.E-02 1.E-01 1.E+00 0.0 1.E-04 tP(s) 1.E-02 1.E-01 =tp/T 1.E+00 tp 1.E-03 1.E+01 Figure 5. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 6. Junction capacitances versus reverse voltage applied (typical values per diode) F=1MHz VOSC=30mVRMS Tj=25C IR(mA) 1.E+03 1.E+02 1.E+01 1.E+00 1.E-01 Tj=50C 10000 C(pF) Tj=150C Tj=125C Tj=100C Tj=75C 1000 1.E-02 1.E-03 1.E-04 0 Tj=25C VR(V) 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 100 1 10 VR(V) 100 1000 3/7 1 Characteristics STPS200170TV1 Figure 8. Forward voltage drop versus forward current (per diode, high level) Figure 7. Forward voltage drop versus forward current (per diode, low level) IFM(A) 50 45 40 35 30 25 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) Tj=150C (Typical values) Tj=25C (Maximum values) Tj=150C (Maximum values) IFM(A) 1000 Tj=150C (Maximum values) 100 Tj=150C (Typical values) Tj=25C (Maximum values) 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Figure 9. Normalized avalanche power derating versus pulse duration Figure 10. Normalized avalanche power derating versus junction temperature PARM (t p ) PARM (25C) PARM (t p ) PARM (1s) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 t p (s) 10 100 1000 Tj (C) 0 25 50 75 100 125 150 4/7 STPS200170TV1 2 Package mechanical data 2 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 4. ISOTOP dimensions DIMENSIONS E G2 C REF. Millimeters Min. Max 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 A A A1 C2 E2 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 B C F1 F C2 D D1 P1 E E1 D S G D1 E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 OP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 3 Ordering information STPS200170TV1 3 Ordering information Part Number STPS200170TV1 Marking STPS200170TV1 Package ISOTOP Weight 27 g without screws Base qty 10 with screws Delivery mode Tube 4 Revision history Date 14-Nov-2005 Revision 1 First issue. Description of Changes 6/7 STPS200170TV1 4 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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